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  s r f 8 6 0 c t s r f 8 2 0 c t t h r u s r f 8 2 0 0 c t schottky barrier rectifier reverse voltage - 20 to 200 volts forward current - 8.0amperes maximum ratings and electrical characteristics notes : 1.pulse test: 300 s pulse width,1% duty cycle (r atings at 25 c ambient temperature unless other wise specified ,single phase ,half wave ,resistive or inductive load. f or capacitive load,derate by 20%.) 2.thermal resistance from junction to case maximum repetitive peak reverse voltage v rrm v olts v olts v olts v olts m a a mps a mps v rms v dc i (a v) i f sm t stg v f i r r jc maximum rms voltage maximum dc blocking voltage maximum instantaneous for ward voltage at 8.0 a(notes 1 ) t =25 c t =125 c a a t ypical thermal resistance (notes 2) operating junction temperature range storage temperature range maximum instantaneous reverse current at rated dc blocking voltage(notes 1) p eak for ward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) -65 to+150 -65 to+150 2.5 0.2 15 50 c/w c c t j 20 14 20 30 21 30 40 28 40 50 35 50 60 42 60 80 56 80 100 70 100 150.0 symbols units srf 820ct srf 830ct srf 840ct srf 850ct srf 860ct srf 880ct srf 8100ct features mechanical data dimensions in inches and (millimeters) plastic pack age has under writers l aborator y flammability classification 94v -0 metal silicon junction ,majority carrier conduction guard ring for over voltage protection l ow power loss ,high efficiency high current capability ,l ow for ward voltage drop single rectifier construction high surge capability f or use in low voltage ,high frequency inver ters, free wheeling ,and polarity protection applications high temperature soldering guaranteed:260 c/10 seconds, 0.25"(6.35mm)from case component in accordance to r ohs 2002 / 95 / ec and weee 2002 / 96 / ec case : jedec i to -220a b molded plastic body t erminals : l ead solderable per mil -std -750,method 2026 p olarity : as mark ed mounting p osition : any w eight : 0.08ounce, 2.24 gram srf 8200ct srf 8150ct 150 105 150 200 140 200 it o-220ab 1.161(29.5) 0.177(4.50) 0.104(2.64) 0.029(0.73) 0.111(2.83) 0.140(3.55) 0.110(2.80) 0.187(4.75) 0.138(3.50) 0.551(14.00) 0.029(0.73) 1.083(27.5) 0.138(3.50) 0.096(2.44) 0.019(0.47) 0.101(2.57) 0.128(3.25) dia 0.102(2.60) 0.167(4.25) 0.130(3.30) 0.512(13.00) 0.019(0.47) pin 1 2 3 0.130(3.31) 0.11 1(2. 81) 0 . 60 0.75 0.85 0.95 0.90 0.056(1.43) 0.043(1.10) 0.410(10.41) 0.390(9.91) 0.067(1.70) 0.059(1.50) 4 . 0 8 . 0 maximum average for ward rectified current(see f ig.1) per leg t otal device xinghe electronics e?o?? gaomi xinghe electronicsco.,ltd. www.sddzg.com tel:0536-2210359 qq:464768017 1
2 0.1 0.001 0.01 0.1 1.0 10 1.0 125 130 135 140 145 150 40 0.2 20 40 60 80 100 120 140 1.0 2.0 5.0 10 20 50 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.1 0.4 1.0 10 40 60 100 100 200 1000 2000 4000 fig.4-typical junction capacitance fig.5-maximum non-repetitive peak forward surge current fig.2-typical instantaneous forward characteristics fig.3-typical reverse characteristics c a p a c i t a n c e ( p f ) i n s t a n t a n e o u s f o r w a r d c u r r e n t ( a m p e r e s ) i n s t a n t a n e o u s r e v e r s e c u r r e n t ( m a ) p e a k f o r w a r d s u r g e c u r r e n t ( a m p e r e s ) inst ant aneous forw ard vol t age (vol ts) percent of ra ted peak reverse vol t age (vol ts) reverse vol t age (vol ts) number of cycles a t 60hz 50v~200v 20v~40v t j =25 c pulse width=300 s 1% duty cycle 50v~200v 20v~40v t c =25 c t c =75 c t c =150 c t c =125 c 0 50 100 150 0 1.0 3.0 2.0 5.0 4.0 fig.1-forward current derating curve a v e r a g e f o r w a r d c u r r e n t a m p e r e s lead tempera ture ( c) single phase half wa ve 50hz inductive or resistive l oad 8.3ms single half sine- wa ve (jedec method) 10 50v~200v 20v~40v s r f 8 2 0 c t t h r u s r f 8 2 0 0 c t schottky barrier rectifier reverse voltage - 20 to 200 volts forward current - 8.0amperes xinghe electronics e?o?? gaomi xinghe electronicsco.,ltd. www.sddzg.com tel:0536-2210359 qq:464768017


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